Material and electrical characterizations of high-k Ta2O5 dielectric material deposited on polycrystalline silicon and single crystalline substrate

作者：Kao Chyuan Haur; Chen Hsiang^*; Chen Chian You

来源：Microelectronic Engineering, 2015, 138: 36-41.

DOI：10.1016/j.mee.2015.01.011

• Ta2O5
• Single crystalline silicon
• Polysilicon
• Annealing
• Material quality
• Electrical measurements

Samples of high-k Ta2O5 film as a high-k gate dielectric sputtered on both a single crystalline substrate and a polycrystalline silicon substrate and annealed at different temperatures were fabricated and compared. Samples were examined using various material and electrical analyses, including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force spectroscopy (AFM), equivalent oxide thickness (EOT), JE characteristics, charge-to-breakdown Weibull plots, and gate voltage shift versus stress time. The research concludes that a Ta2O5 dielectric on a single crystalline substrate had fewer structural defects than a high-k/polysilicon interface, forming a dielectric with better material properties and electrical reliability.

• 出版日期2015-4-20
• 单位长春大学