摘要
An analogue nonvolatile memory is presented, which is not only CMOS-compatible but also capable of storing analogue currents with a resolution of more than eight bits. The programming process is controlled by a hysteretic comparator on-chip, which stops the injection current automatically by negative feedback, regardless of the programming nonlinearity and device mismatches. With the simple, on-chip programming circuit, the proposed analogue memory is capable of storing currents ranging from 1 to 18 mu A accurately with negligible variations across different memory cells.
- 出版日期2010-6-10
- 单位清华大学