Post-growth surface smoothing of thin films of diindenoperylene

作者：Hinderhofer A^*; Hosokai T; Yonezawa K; Gerlach A; Kato K; Broch K; Frank C; Novak J; Kera S; Ueno N; Schreiber F

来源：Applied Physics Letters, 2012, 101(3): 033307.

DOI：10.1063/1.4737168

We applied in situ x-ray reflectivity and ultraviolet photoelectron spectroscopy to study the impact of annealing on low temperature (200 K) deposited organic thin films of diindenoperylene (DIP) on SiO2 and indium tin oxide (ITO). At 200 K, DIP is crystalline on SiO2 and amorphous on ITO. Upon heating to room temperature, the roughness of DIP is reduced on both substrates, from 1.5 nm to 0.75 nm (SiO2) and from 0.90 nm to 0.45 nm (ITO). The smoothing is accompanied by crystallization of the surface molecules, whereas the bulk structure of the films does not strongly reorganize.

• 出版日期2012-7-16