X-band inverse class-F GaN internally-matched power amplifier

作者：Zhao, Bo-Chao; Lu, Yang; Han, Wen-Zhe; Zheng, Jia-Xin; Zhang, Heng-Shuang; Ma, Pei-jun^*; Ma, Xiao-Hua; Hao, Yue

来源：Chinese Physics B, 2016, 25(9): 097306.

DOI：10.1088/1674-1056/25/9/097306

• GaN internally-matched power amplifier
• inverse class-F
• compensation design
• X-band power amplifier

An X-band inverse class-F power amplifier is realized by a 1-mm AlGaN/GaN high electron mobility transistor (HEMT). The intrinsic and parasitic components inside the transistor, especially output capacitor C-ds, influence the harmonic impedance heavily at the X-band, so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane. Experiment results show that, in the continuous-wave mode, the power amplifier achieves 61.7% power added efficiency (PAE), which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT. To the best of our knowledge, this is the first inverse class-F GaN internally-matched power amplifier, and the PAE is quite high at the X-band.

• 出版日期2016-9
• 单位西安电子科技大学