Dislocations formed under longitudinal stress field in epitaxial-lateral-overgrowth GaN

作者：Cai Duanjun; Kang Junyong^*; Ito Shun

来源：Materials Science in Semiconductor Processing, 2006, 9(1-3): 15-18.

DOI：10.1016/j.mssp.2006.01.002

• GaN
• dislocation
• stress field

Dislocation semi-loops in the lateral epitaxial region of GaN have been observed and characterized using transmission electron microscopy. The loops are not coplanar in a (0001) close-packed plane and the motion of vertical glide is found. The Burgers vectors are determined to be parallel to [0001] direction. These evidences demonstrate that a c-axial stress field exists in the lateral region transited from the in-plane stress of the window region. The value and distribution of this special stress field have been measured via Auger electron spectroscopy.

• 出版日期2006-6
• 单位厦门大学