科研之友
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摘要
We derived an analytical model to obtain a 2-D impurity concentration profile for ions implanted at high-tilt angles in MOS-structure substrates. This model enabled us to simulate MOS device characteristics with a fully analytical impurity distribution where diffusion was neglected. We tested and verified that our analytical model could provide the same results as the ones obtained using a 2-D process simulator.
- 出版日期2009-12
