Analysis of Degradation Mechanism in SONOS-TFT Under Hot-Carrier Operation

作者：Chen, Te Chih^*; Chang, Ting Chang; Chen, Shih Ching; Hsieh, Tien Yu; Jian, Fu Yen; Lin, Chia Sheng; Li, Hung Wei; Lee, Ming Hsien; Chen, Jim Shone; Shih, Ching Chieh

来源：IEEE Electron Device Letters, 2010, 31(12): 1413-1415.

DOI：10.1109/LED.2010.2079912

• Hot carriers
• nonvolatile memory
• thin-film transistors (TFTs)

This letter investigates the degradation mechanism of polycrystalline silicon thin-film transistors with a silicon-oxide-nitride-oxide-silicon structure under OFF-state stress. During the electrical stress, the hot hole generated from band-to-band tunneling process will inject into gate dielectric, and the significant ON-state degradation (more than 1 order) indicates that the interface states are accompanied with hot-hole injection. In addition, the asymmetric I-V characteristics indicate that the interface states are located near the drain side. Moreover, the ISE-TCAD simulation tool was utilized to model the degradation mechanism and analyze trap states distribution. Although both the vertical and lateral electrical fields are factors for degradation and hot-hole injection, the degradation is mainly affected by the lateral electrical field over a critical point.

• 出版日期2010-12
• 单位中山大学