科研之友
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摘要
We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m(2)/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al2O3, as an insulator, we obtain strongly reduced threshold voltages close to zero. In addition to the predominantly small-angle scattering well known in the high-mobility heterostructures, the observed linear temperature dependence of the conductivity reveals the presence of a short-range random potential.
- 出版日期2015-3-2
- 单位东北大学; 中国科学院电工研究所
