A 650 V Super-Junction MOSFET With Novel Hexagonal Structure for Superior Static Performance and High BV Resilience to Charge Imbalance: A TCAD Simulation Study

作者：Park Jaehoon; Lee Jong Ho^*

来源：IEEE Electron Device Letters, 2017, 38(1): 111-114.

DOI：10.1109/LED.2016.2631619

• High voltage
• HV power MOSFET
• power device
• super-junction MOSFET

A superjunction MOSFET (SJ-MOSFET) with a new fully close-packed hexagonal pattern for its superjunction (SJ) region is proposed. According to TCAD simulation, the proposed device can accommodate highly doped n-pillars with no significant degradation of its blocking voltage (BV), where its conventional counterpart, a SJ-MOSFET with a stripe-patterned SJ region is incapable of. In comparison with the conventional device, the proposed device shows dramatic reduction of ON-resistance down by 41% while keeping its BV of 650 V. The proposed device also shows superior BV resilience to charge imbalance than the conventional device.

• 出版日期2017-1