Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

作者：Ahmed Adam S; Wen Hua; Ohta Taisuke; Pinchuk Igor V; Zhu Tiancong; Beechem Thomas; Kawakami Roland K^*

来源：Journal of Crystal Growth, 2016, 447: 5-12.

DOI：10.1016/j.jcrysgro.2016.04.057

• Molecular beam epitaxy
• Oxides
• Perovskites
• Graphene

We report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of < 1.5 angstrom. Transport measurements of exfoliated graphene after SrO deposition show a strong dependence between the Dirac point and Sr oxidation. Subsequently, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

• 出版日期2016-8-1