A new analytical threshold voltage model for the doped polysilicon thin-film transistors

作者：Wu, Weijing^*; Yao, Ruohe; Zheng, Xueren

来源：Solid-State Electronics, 2009, 53(6): 607-612.

DOI：10.1016/j.sse.2009.04.001

• Polysilicon thin-film transistors
• Analytical model
• Threshold voltage

A new analytical threshold voltage model for the doped polysilicon thin-film transistors (poly-Si TFTs) is proposed in this paper, which is related to U-shaped distribution of density of states in the grain boundary, the gate oxide thickness. the substrate doping concentration, and the grain size. Moreover, the new model has a simple functional form and it can reduce to the threshold voltage model of the conventional long channel MOSFET when the grain size is large.

• 出版日期2009-6
• 单位华南理工大学