Arsenic-induced faceted lateral nanoprisms array on Si (103) surface

作者：Wang, Xing-Jun^*; Scopece, Daniele; Wang, Jun-Zhong; Fujikawa, Yasunori; Huang, Chun-Lai; Sakurai, Toshio; Chen, Gang^*

来源：Applied Surface Science, 2019, 463: 713-720.

DOI：10.1016/j.apsusc.2018.08.255

• Scanning tunneling microscopy (STM)
• Si(103)
• Nanoprisms
• Reconstruction

Highly ordered As/Si faceted lateral nanoprisms array with a uniform width of about 10-18 nm are fabricated on Si {1 0 3} miscut surface via thermal deposition of sub-monolayer arsenic followed by a subsequent annealing process. In situ scanning tunneling microscopy (STM) studies prove the compactly arranged As/Si nanoprisms orienting along <3 0 1> direction, which are bounded by As terminated {1 1 3} facets with 2 x 2 reconstruction. The formation mechanism of the nanoprisms and the surface faceting is investigated via surface energy and chemical potential comparison for the As/Si systems. Ab initio calculations attribute the driving force of the geometry transition to the minimization of surface energy. Moreover, the compatibility of the lateral As/Si nanoprisms with the well-established Si technology propose an alternative strategy to fabricate III-V nanowires on Si substrate, which is promising for both the fundamental research and a variety of applications.

• 出版日期2019-1-1
• 单位中国科学院; 红外物理国家重点实验室; 中国科学院上海技术物理研究所