Microstructure and microwave dielectric properties of Ba4.2Nd9.2Ti18-xSnxO54(x=0, 0.25, 0.5, 1, 1.5, 2) ceramics

作者：Huang Baoyu; Wang Zhefei; Chen Tao; Wang Lixi; Fu Zhenxiao; Zhang Qitu^*

来源：Journal of Materials Science: Materials in Electronics , 2015, 26(5): 3375-3379.

DOI：10.1007/s10854-015-2843-4

Ba4.2Nd9.2Ti18-xSnxO54(x = 0, 0.25, 0.5, 1, 1.5, 2) microwave dielectric ceramics with high Q x f value were prepared by conventional solid state route. The microstructure and microwave dielectric properties of Ba4.2Nd9.2Ti18-xSnxO54(x = 0, 0.25, 0.5, 1, 1.5, 2)(BNTS) ceramics were systematically investigated. XRD patterns showed that there was only a single BaNd2Ti5O14 phase identified in all samples and no second phase was found. SnO2 substitution increases the lattice parameters of BNT ceramic. Moreover, the bulk density of BNT ceramics increases as the x increases. Both the permittivity and tau(f) value decrease when the Sn concentration increases. The SnO2 substitution has a big influence on Q x f value. When x = 0.5, the BNTS ceramic gains the highest Q x f value. Afterwards, the Q x f value decreases sharply when x value increases. Excellent microwave dielectric properties were achieved in Ba(4.2)Nd(9.2)Ti(18-x)SnxO(54) (x = 0.5) ceramics sintered at 1340 degrees C for 2 h: epsilon(r) = 80.6, Q x f = 9177 GHz, tau(f) = 61 ppm/degrees C.

• 出版日期2015-5