MOVPE growth and indium incorporation of polar, semipolar (11(2)over-bar2) and (20(2)over-bar21) InGaN

作者：Dinh Duc V^*; Pristovsek Markus; Kneissl Michael

来源：Physica Status Solidi (B) Basic Research, 2016, 253(1): 93-98.

DOI：10.1002/pssb.201552274

• InGaN
• metal-organic vapour phase epitaxy
• photoluminescence
• semipolar layers

InGaN layers were grown simultaneously on polar (0001), and on semipolar (11 (2) over bar2) and (20 (2) over bar1) GaN templates with different In/Ga ratios by metalorganic vapour phase epitaxy with a thickness of about 50 nm. The indium content of the layers behaved as follows: (0001)>(11 (2) over bar2)>(20 (2) over bar1). The relaxed (0001) layers showed the highest indium content (In similar to 17.4-48.7%) with an island-like surface morphology, while the relaxed (11 (2) over bar2) layers (In similar to 14.0-40.0%) had nearly unchanged morphology compared to the semipolar GaN templates. The (20 (2) over bar1) layers exhibited a three-dimensional morphology that was attributed to differences in growth on the (10 (1) over bar1) and (10 (1) over bar 10) surfaces. The degree of relaxation also reduced from 100% for the (0001) layers to less than 15% for the (20 (2) over bar1) layers that was attributed to the lowest indium content of the (20 (2) over bar1) layers. Room-temperature photoluminescence (PL) measurements of the semipolar layers showed a peak in emissionwavelength that shifts gradually from 450 to 820 nm with increasing indium content. The stronger PL intensity of the semipolar layers was attributed to background impurity and band filling effects in the layers.

• 出版日期2016-1