Study of the subthreshold swing of a pMOSFET as a dosimetric parameter

作者：Banqueri J; Carvajal M A; Martinez Garcia M S; Morales D P; Palma A J^*

来源：Sensors and Actuators A: Physical , 2012, 187: 16-21.

DOI：10.1016/j.sna.2012.08.015

• Dosimeter
• MOSFET
• Subthreshold swing
• Threshold voltage

A study of the degradation of the subthreshold swing in a general-purpose pMOSFET is carried out to evaluate its use as a dosimetric parameter. Its reliability in terms of sensitivity, linearity, and reproducibility is experimentally tested and compared with the threshold voltage shift under gamma rays from a Co-60 source up to 56 Gy, typical in radiotherapy treatments. The dependence of the subthreshold swing as a function of temperature is characterized and modelled as a mean for thermal compensation when used for dose measurement. Very promising results have been obtained for the subthreshold swing as a complementary dosimetric parameter to the threshold voltage for enhancing the confidence of dose verification systems based on MOSFETs. C) 2012 Elsevier B.V.

• 出版日期2012-11