Area Scaling for Backend Dielectric Breakdown

作者：Milor Linda^*; Hong Changsoo

来源：IEEE Transactions on Semiconductor Manufacturing, 2010, 23(3): 429-441.

DOI：10.1109/TSM.2010.2051730

• Backend dielectric breakdown
• low-k dielectric
• semiconductor reliability

Backend dielectric breakdown is an increasingly important issue for advanced CMOS processes due to the use of progressively lower k dielectrics in the backend. This paper presents area-scaling formulas to enable full chip failure rate projection from test structure data. The area-scaling formulas are based on the negative binomial defect distribution, which in the limit is equivalent to models based on the Poisson distribution. Both the Weibull and log-normal distributions are considered for data characterization. The results are applied to data measured from backend comb structures, and reveals a low level of defect clustering.

• 出版日期2010-8