Preparation and characterization of indium zinc oxide thin films by electron beam evaporation technique

作者：Keshavarzi Reza; Mirkhani Valiollah^*; Moghadam Majid; Tangestaninejad Shahram; Mohammadpoor Baltork Iraj; Fallah Hamid Reza; Dastjerdi Mohammad Javad Vahid; Modayemzadeh Hamed Reza

来源：Materials Research Bulletin, 2011, 46(4): 615-620.

DOI：10.1016/j.materresbull.2010.09.019

• Thin films
• Nanostructure
• Vapor deposition
• X-ray diffraction
• Optical properties

In this work, the preparation of In2O3-ZnO thin films by electron beam evaporation technique on glass substrates is reported. Optical and electrical properties of these films were investigated. The effect of dopant amount and annealing temperature on the optical and electrical properties of In2O3-ZnO thin films was also studied. Different amount of ZnO was used as dopant and the films were annealed at different temperature. The results showed that the most crystalline, transparent and uniform films with lowest resistivity were obtained using 25 wt% of ZnO annealed at 500 degrees C.

• 出版日期2011-4