科研之友
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摘要
Convergent beam electron diffraction patterns of silicon from the gate channel region of a complementary metal-oxide-semiconductor transistor with recessed Si.82Ge.18 stressors were analysed using three zone axes: < 230 >, < 340 > and < 670 >. Values measured using these axes were compared with each other with regards to strain along the [1 (1) over bar0] and the [001] directions. It was demonstrated that strain measurements made using all three axes showed reasonable agreement with each other: an increase in the [1 (1) over bar0] compressive strain and a switch from compressive to tensile strain in the [001] with decreasing distance below the gate. It was also observed that the strain calculations using the < 230 > axis had the lowest uncertainty whereas the < 670 > axis allowed for measurements closest to the gate due to the improved lateral resolution at that tilt angle.
- 出版日期2010-8
