Nonvolatile Memory Thin-Film Transistors Using Biodegradable Chicken Albumen Gate Insulator and Oxide Semiconductor Channel on Eco-Friendly Paper Substrate

作者：Kim So Jung; Jeon Da Bin; Park Jung Ho; Ryu Min Ki; Yang Jong Heon; Hwang Chi Sun; Kim Gi Heon; Yoon Sung Min^*

来源：ACS Applied Materials & Interfaces, 2015, 7(8): 4869-4874.

DOI：10.1021/am508834y

• eco-friendly device
• nonvolatile memory
• paper substrate
• chicken albumen dielectric
• oxide semiconductor

Nonvolatile memory thin-film transistors (TFTs) fabricated on paper substrates were proposed as one of the eco-friendly electronic devices. The gate stack was composed of chicken albumen gate insulator and In-Ga-Zn-O semiconducting channel layers. All the fabrication processes were performed below 120 degrees C. To improve the process compatibility of the synthethic paper substrate, an Al2O3 thin film was introduced as adhesion and barrier layers by atomic layer deposition. The dielectric properties of biomaterial albumen gate insulator were also enhanced by the preparation of Al2O3 capping layer. The nonvolatile bistabilities were realized by the switching phenomena of residual polarization within the albumen thin film. The fabricated device exhibited a counterclockwise hysteresis with a memory window of 11.8 V, high on/off ratio of approximately 1.1 x 10(6), and high saturation mobility (mu sat) of 11.5 cm(2)/(V s). Furthermore, these device characteristics were not markedly degraded even after the delamination and under the bending situration. When the curvature radius was set as 5.3 cm, the I-ON/I-OFF ratio and mu(sat) were obtained to be 5.9 x 10(6) and 7.9 cm(2)/(V s), respectively.

• 出版日期2015-3-4