科研之友
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摘要
The linearity of a gate-all-around junctionless silicon nanowire (SiNW) FET has been analyzed. The SiNW FET shows a perfectly linear I-D-V-G relation and a nearly zero output conductance. The mechanism of its linear behaviors due to degenerate doping level has been also demonstrated. For RF applications, the proposed SiNW FET exhibits a much lower distortion for a whole range of load resistance, making it superior to modern short-channel MOSFET.
- 出版日期2013-4
