摘要
The Impact Ionization MOSFET (I-MOS) is a potential candidate for the post-CMOS era, allowing very sharp subthreshold slopes, down to a few mV/dec. For the first time, an analytical model is developed for this new kind of device. In the first part, the analytical model is explained and compared with TCAD results. The second part deals with the compact modeling of the I-MOS, allowing simulations of inverters.
- 出版日期2007
- 单位中国地震局