Analytic estimation and minimization of line edge roughness in electron-beam lithography

作者：Guo Rui^*; Lee Soo Young; Choi Jin; Park Sung Hoon; Shin In Kyun; Jeon Chan Uk

来源：Journal of Vacuum Science and Technology B, 2015, 33(6): 06FD07.

DOI：10.1116/1.4936070

As the feature size is reduced well below 100 nm, the line edge roughness (LER) will eventually become a resolution-limiting factor in the electron-beam (e-beam) lithography since the LER does not scale with the feature size. Therefore, it is essential to minimize the LER in order to achieve the highest resolution possible by the e-beam lithographic process. A simulation or experiment based method for minimizing the LER can be very time-consuming and expensive since repetitive simulations or experiments may be required. In this study, a new analytic model and a method for estimating the LER are developed based on the model, and an analytic procedure for minimizing the LER is also derived based on the new analytic model. In this new approach, the LER is derived from the distribution of the stochastic developing rate in the resist, which is assumed to be known. The results obtained by the analytic estimation method and the minimization procedure are shown to be close to those by the simulation method. The current work includes generalization of the results of this study with more practical models.

• 出版日期2015-11