摘要
This letter reports the proof-of-concept results for the new nontraditional nanophase-switching electrostatic-discharge (ESD) protection mechanism and nanocrossbar ESD structures. Experiment shows good ESD switching and protection, i.e., a fast response of 100 ps, a ultralow leakage of 0.26 pA, and an ESD protection of > 267 V/mu m(2). A new dispersed local ESD tunneling model is proposed, and heterogeneous complementary metal-oxide-semiconductor integration is developed.
- 出版日期2011-3
- 单位北京大学