Low turnoff loss reverse-conducting IGBT with double n-p-n electron extraction paths

作者：Jiang, H.^*; Zhang, B.; Chen, W.; Qiao, M.; Li, Z.; Liu, C.; Rao, Z.; Dong, B.

来源：Electronics Letters, 2012, 48(8): 457-U68.

DOI：10.1049/el.2012.0260

• TECHNOLOGY
• DESIGN

A low turnoff loss snapback-free reverse-conducting insulated-gate bipolar transistor (RC-IGBT) with a novel collector structure is demonstrated. The n-collector is partially enclosed by a floating p-layer (p-float) which acts as a barrier for electrons at low current in the forward conduction state and contributes to the snapback-free forward conduction characteristics. The p-float makes the proposed device feature double n-p-n electron extraction paths, the n-drift/p-float/n-collector (n-p-n1, n-drift is emitter) and the n-buffer/p-float/n-collector (n-p-n2, n-buffer is emitter), both of which can be activated during turnoff. As numerical simulations show, the two n-p-n extraction paths, especially n-p-n2 which is more effective than n-p-n1, are favourable to the ultra-low turnoff loss.

• 出版日期2012-4-12
• 单位电子科技大学