Buckling and Delamination of Ti/Cu/Si Thin Film During Annealing

作者:Lin Qijing*; Yang Shuming; Jing Weixuan; Li Changsheng; Wang Chenying; Jiang Zhuangde; Jiang Kely
来源:Journal of Electronic Materials, 2014, 43(9): 3351-3356.
DOI:10.1007/s11664-014-3238-7

摘要

In this paper, the formation of buckling and delamination of sandwiched stacking of Ti/Cu/Si thin film are investigated. The crystallization structures, the composition of the Cu/Ti thin films, and the surface morphology are measured during annealing. The results show that the solid-phase reaction between Cu and Ti occurs at the interface. Buckling is initiated in the thin film annealed at 600A degrees C. The volume expansion promotes the buckling and further produces microcracks. With increasing volume expansion, there are cavities formed in the middle layer when the annealing temperature is up to 700A degrees C. Finally, thin film is delaminated from the substrate.