Multilevel switching mechanism for resistive random access memory based on Cu/SiOx/Al structure

作者：Chen Ran; Zhou Li Wei; Wang Jian Yun; Chen Chang Jun; Shao Xing Long; Jiang Hao; Zhang Kai Liang; Lu Lian Rong^*; Zhao Jin Shi

来源：Acta Physica Sinica, 2014, 63(6): 067202.

DOI：10.7498/aps.63.067202

• resistive random access memory
• SiOx thin film
• multilevel
• resistive switching mechanism

In this paper, resistive switching device based on Cu/SiOx/Al structure is fabricated to examine its resistive switching characteristics and explore its resistive switching mechanisms. By adjusting limiting current, four stable resistance states are obtained. All of the resistive ratios between adjacent resistance states are over than 10. Moreover, the retention data of these four states at room temperature keep stable up to 1000 s. The temperature-dependent measurement and I-V curves fitting results show that the resistive switching mechanisms of the four states are different: resistance states 1 and 2 are due to Ohmic conduction mechanism, resistance state 3 is due to Pool-Frenkel emission, and resistance state 4 is due to Schottky emission mechanism. Subsequently, a resistive switching model for Cu/SiOx/Al structure is proposed.

• 出版日期2014-3
• 单位天津理工大学