Novel In2O3 nanostructures fabricated by controlling the kinetics factor for field emission display

作者：Huang, Yanjun; Yu, Ke^*; Xu, Zhe; Zhu, Ziqiang

来源：Physica E: Low-Dimensional Systems and Nanostructures , 2011, 43(8): 1502-1508.

DOI：10.1016/j.physe.2011.04.017

• Electric voltage
• Field emission currents
• Field emission measurements
• Field emission property
• Growth mechanisms
• Indium oxide
• Layered Structures
• Nanotowers
• Saturation ratio
• Sharp tip
• Silicon substrates
• Threshold fields
• Turn-on field
• Vapor-phase transport method

Four kinds of novel indium oxide (In2O3) nanostructures, namely, polygonal nanotowers, nanotowers, nanoarrows and layered nanorods were synthesized on silicon substrate via a simple vapor-phase transport method under atmospheric pressure. Except the nanoarrows, all the other three nanostructures consist of periodic nanometer-sized layered structures. The growth mechanism analyses indicate that the kinetics factor (saturation ratio) plays an important role in the morphology of In2O3 nanostructures. Field emission measurements demonstrate that the nanoarrows with sharp tips possess the best performance with a turn-on field of 3.79 V/mu m and a threshold field of 10.43 V/mu m. In this study, the field emission properties of an individual In2O3 nanostructure were measured for the first time. A field emission current of 0.1 mu A was obtained at an average electric voltage of 2796 V. The repeatability was very good.

• 出版日期2011-6
• 单位华东师范大学