Noise Characterization of Midwave Infrared InAs/GaSb Superlattice pin Photodiode

作者：Jaworowicz Katarzyna^*; Ribet Mohamed I; Cervera C; Rodriguez J B; Christol P

来源：IEEE Photonics Technology Letters, 2011, 23(4): 242-244.

DOI：10.1109/LPT.2010.2093877

• Dark current
• InAs/GaSb superlattice
• infrared photodiodes
• noise measurement

We report on noise characterization of a midwave infrared (MWIR) InAs/GaSb superlattice (SL) single detector. The SL structure was made of eight InAs monolayers (MLs) and eight GaSb MLs, with a total thickness of 2 mu m (440 SL periods). This structure exhibits a cut-off wavelength of 4.8 mu m at 77 K. Extracted from current-voltage characteristics, zero-bias resistance area product above R(0) A above 5 x 10(5) Omega . cm(2) at 80 K was measured. Noise measurements were also performed under dark conditions. The measurements reveal the absence of 1/f noise above 30 Hz. Moreover, the detector under test remains Schottky noise-limited up to a bias voltage of -200 mV typically, which confirms the quality of the MWIR SL pin photodiode.

• 出版日期2011-2