Embedded Memory and ARM Cortex-M0 Core Using 60-nm C-Axis Aligned Crystalline Indium-Gallium-Zinc Oxide FET Integrated With 65-nm Si CMOS

作者：Onuki Tatsuya^*; Uesugi Wataru; Isobe Atsuo; Ando Yoshinori; Okamoto Satoru; Kato Kiyoshi; Yew Tri Rung; Wu J Y; Shuai Chi Chang; Wu Shao Hui; Myers James; Doppler Klaus; Fujita Masahiro; Yamazaki Shunpei

来源：IEEE Journal of Solid-State Circuits, 2017, 52(4): 925-932.

DOI：10.1109/JSSC.2016.2632303

• C-axis-aligned crystalline indium-gallium-zinc oxide (CAAC-IGZO)
• dynamic oxide semiconductor random access memory (DOSRAM)
• OFF-state current
• oxide semiconductor flip-flop (OS-FF)
• power gating

Low-power embedded memory and an ARM Cortex-M0 core that operate at 30 MHz were fabricated in combination with a 60-nm c-axis aligned crystalline indium-gallium-zinc oxide FET and a 65-nm Si CMOS. The embedded memory adopted a structure wherein oxide semiconductor-based 1T1C cells are stacked on Si sense amplifiers. This memory achieved a standby power of 3 nW while retaining data and an active power of 11.7 mu W/MHz by making each bitline as short as each sense amplifier. The Cortex-M0 core adopted a flip-flop (FF) in which an oxide semiconductor-based 3T1C cell is stacked on the Si scan FF cell without area overhead, and achieved a standby power of 6 nW while retaining data. This combination of embedded memory and Cortex-M0 core can provide high-performance as well as low-power operation, which is essential for Internet of Things devices.

• 出版日期2017-4