Analog and Digital Performance Assessment of Empty Space in Double Gate (ESDG) MOSFET: A Novel Device Architecture

作者：Kumari Vandana; Saxena Manoj; Gupta R S; Gupta Mridula^*

来源：Journal of Computational and Theoretical Nanoscience, 2013, 10(2): 389-398.

DOI：10.1166/jctn.2013.2710

• Empty Space in Silicon
• Double Gate
• ATLAS 3D
• Inverter

In this work, physics based compact drain current model of un-doped (or lightly doped) nanoscale symmetric double Gate MOSFET incorporating Empty Space in Silicon (ESS) channel is presented and verified using ATLAS 3D device simulation software. The simulated results have been validated by comparing the transfer characteristics and the output characteristics of DG MOSFET and ESS MOSFET with the experimental results. The improved analog and digital performance metrics such as device gain (g(m)/g(d)), device efficiency (g(m)/I-ds), output resistance (R-out), early voltage (V-ea) I-on /I-off ratio, on resistance (R-on), noise margin and delay time (tau(d)) shows the suitability of device for improved analog and high speed digital applications as compared to DG MOSFET, single gate bulk ESS MOSFET and conventional bulk MOSFET. The reduced DIBL, parasitic capacitance and nearly ideal sub-threshold slope of ESDG MOSFET also makes this device highly scalable.

• 出版日期2013-2