科研之友
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摘要
A novel efficient boost chopper integrated with two cryogenic metal-oxide semiconductor field-effect transistors (MOSFETs) and one high-temperature superconducting (HTS) inductor is presented. State-of-the-art CoolMOS MOSFETs are introduced and immersed in liquid nitrogen to save about 85% of conduction losses. Considering the anisotropy of gadolinium barium copper oxide (GdBCO) tapes, ferromagnetic disks with raised edges are optimized to enhance the critical current and reduce the hysteresis loss of the HTS smoothing inductor. As compared to the conventional boost chopper composed of ambient-temperature power electronics and a copper inductor, the total operational loss from the cryogenic MOSFETs and the HTS inductor in the proposed cryogenic boost chopper is reduced by 87% in the case of a 40-kW chopper.
