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摘要
Deuterium retention in the implantation-induced defects in polycrystalline tungsten has been studied. Deuterium was implanted with different energies and concentrations of retained D were analysed with secondary ion mass spectrometry and nuclear reaction analysis. Annealings were carried out at four pre-determined temperatures corresponding to four different defect types that can trap deuterium. A quantitative number of each defect type produced by 5, 15 and 30 keV D implantation with a dose of 5.8 x 10(16) cm(-2) was obtained.
- 出版日期2007-3
