Aerosol assisted chemical vapour deposition of germanium thin films using organogermanium carboxylates as precursors and formation of germania films

作者：Shah Alpa Y; Wadawale Amey; Sagoria Vijaykumar S; Jain Vimal K^*; Betty C A; Bhattacharya S

来源：Bulletin of Materials Science, 2012, 35(3): 365-368.

DOI：10.1007/s12034-012-0302-x

• Organogermanium
• germanium thin films
• AACVD
• XRD

Diethyl germanium bis-picolinate, [Et2Ge(O2CC5H4N)(2)], and trimethyl germanium quinaldate, [Me3Ge(O2CC9H6N)], have been used as precursors for deposition of thin films of germanium by aerosol assisted chemical vapour deposition (AACVD). The thermogravimetric analysis revealed complete volatilization of complexes under nitrogen atmosphere. Germanium thin films were deposited on silicon wafers at 700A degrees C employing AACVD method. These films on oxidation under an oxygen atmosphere at 600A degrees C yield GeO2. Both Ge and GeO2 films were characterized by XRD, SEM and EDS measurements. Their electrical properties were assessed by current-voltage (I-V) characterization.

• 出版日期2012-6