Advances in research of metallorganic precursors for ferroelectric oxide thin films via MOCVD

作者：Kong XR^*; Liu JL; Zeng YW

来源：Progress in Chemistry, 2005, 17(5): 839-846.

• ferroelectric thin films
• MOCVD
• metallorganic precursors

Ferroelectric thin films as the highly functional materials are nowadays become one of the research hotspots. With the steady research and development of novel metallorganic precursors, the MOCVD film fabrication technique for ferroelectric thin films has experienced a rapid development in recent years. In this paper through analyzing the close relationships underlying the structure and physicochemical properties of metallorganics such as metal-alkoxides, metal beta-diketonates, etc. , the latest advances in the research of metallorganic precursors for ferroelectric oxide thin films via MOCVD and their developing tendency are reviewed in an attempt of providing valuable references to proper metallorganic precursors for better ferroelectric oxide thin films by MOCVD.

• 出版日期2005-9