Fabrication of 380 nm Ultra Violet Light Emitting Diodes on Nano-Patterned n-type GaN Substrate

作者：Baek Kwang Sun; Sadasivam Karthikeyan Giri; Lee Young Gon; Song Young Ho; Jeong Tak; Kim Seung Hwan; Kim Jae Kwan; Kim Seung Hwan; Jeon Seong Ran; Lee June Key^*

来源：Journal of Nanoscience and Nanotechnology, 2011, 11(8): 7495-7498.

DOI：10.1166/jnn.2011.4816

• UV LED
• PNS
• SiO(2) Nano Pattern

380 nm ultraviolet (UV) light emitting diodes (LEDs) were grown on patterned n-type GaN substrate (PNS) with silicon dioxide (SiO(2)) nano pattern to improve the light output efficiency. Wet etched self assembled indium tin oxide (ITO) nano clusters serves as dry etching mask for converting the SiO(2) layer grown on n-GaN template into SiO(2) nano patterns by inductively coupled plasma etching. Three different diameter of ITO such as 200, 250 and 300 nm were used for SiO(2) nano pattern fabrication. PNS is obtained by n-GaN regrowth on SiO(2) nano patterns and UV LEDs were grown on PNS template by MOCVD. Enhanced light output intensity was observed by employing SiO(2) nano patterns on n-GaN. Among different PNS UV LEDs, LED grown on PNS with 300 nm ITO diameter showed enhancement in light output intensity by 2.1 times compared to the reference LED without PNS.

• 出版日期2011-8