A Nano-power Switched-capacitor Voltage Reference Using MOS Body Effect for Applications in Subthreshold LSI

作者：Zhang Hao^*; Huang Meng Shu; Zhang Yi Meng; Yoshihara Tsutomu

来源：Journal of Semiconductor Technology and Science, 2014, 14(1): 70-82.

DOI：10.5573/JSTS.2014.14.1.070

• CMOS voltage reference
• low power
• low output
• subthreshold
• switched-capacitor
• body effect

A nano-power CMOS voltage reference is proposed in this paper. Through a combination of switched-capacitor technology with the body effect in MOSFETs, the output voltage is defined as the difference between two gate-source voltages using only a single PMOS transistor operated in the subthreshold region, which has low sensitivity to the temperature and supply voltage. A low output, which breaks the threshold restriction, is produced without any subdivision of the components, and flexible trimming capability can be achieved with a composite transistor, such that the chip area is saved. The chip is implemented in 0.18 mu m standard CMOS technology. Measurements show that the output voltage is approximately 123.3 mV, the temperature coefficient is 17.6 ppm/degrees C, and the line sensitivity is 0.15 %/V. When the supply voltage is 1 V, the supply current is less than 9 0 nA at room temperature. The area occupation is approximately 0.03 mm(2).

• 出版日期2014-2