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摘要
The deposition kinetics and microstructure of chemical vapor deposition (CVD) of Nb on the Mo substrate at different deposition variables is investigated. The morphology of CVD Nb is columnar, it exhibits a strong preferred orientation and its growth direction is perpendicular to the substrate surface, the deposition rate and grain size increased with the increase of deposition temperature. The deposition rate conforms to the Arrhenius formula, the activation energy (Delta Q) at high temperature and low temperature is 0.85 kJ/mol and 7.2 kJ/mol, respectively. The rate-limiting step for CVD Nb at high temperature is chemical reaction step, whereas that is the mass transport step at low temperature. Chlorination temperature has a weak influence on deposition rate and grain structure, the deposition rate and grain size of CVD Nb increased with the increase of the chlorine flow and hydrogen flow, the maximum deposition rate is 13.3 g.h(-1), thus, the optimum deposition temperature is 1200 degrees C, chlorination temperature is 350 degrees C, hydrogen flow is 400 ml, chlorine flow is 200 ml.
