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摘要
The piezoelectric constant e(33) is calculated using molecular dynamic simulations for square gallium nitride (GaN) nanowires (NWs). Its magnitude is found to decrease significantly with increasing cross-section and temperature. An attempt is made to understand the physics behind the size- and temperature dependence of e(33). Specifically, a constant surface piezoelectric coefficient e(33)(s) = 0.52 x 10(-9)C/m is achieved for square GaN NWs independent of the geometric size of their cross-sections.
- 出版日期2013-4
- 单位江苏大学
