All-Sputtering, High-Transparency, Good-Stability Coplanar Top-Gate Thin Film Transistors

作者：Chen, Jianqiu; Huang, Xiuqi; Li, Qunjie; Fang, Zhiqiang; Ning, Honglong^*; Tao, Ruiqiang; Liang, Hongfu; Zhou, Yicong; Yao, Rihui^*; Peng, Junbiao

来源：Applied Sciences-Basel, 2019, 9(1): 83.

DOI：10.3390/app9010083

• thin film transistors
• stability
• top-gate
• Nd-IZO

In this work, transparent, stable coplanar top-gate thin film transistors (TFTs) with an active layer of neodymium-doped indium oxide and zinc oxide (Nd-IZO) were successfully fabricated on a glass substrate by all sputtering processes. The devices with a post-annealing temperature of 400 degrees C exhibited good electrical performances with a saturation mobility (mu(sat)) of 4.25 cm(2).V-1.S-1, I-on/I-off ratio about 10(6), V-th of -0.97 V and SS about 0.34 V/decade. Furthermore, the devices exhibited excellent negative and positive bias stability (NBS, PBS) of only a Delta V-th shift of about -0.04 V and 0.05 V after 1 h, respectively. In addition, the devices showed high transparency about 96% over the visible-light region of 400-700 nm, which indicates a great potential in transparent displays.

• 出版日期2019-1-1
• 单位制浆造纸工程国家重点实验室; 发光材料与器件国家重点实验室; 华南理工大学