HfO2-Based RRAM Devices With Varying Contact Sizes and Their Electrical Behavior

作者：Sriraman Venkatakrishnan^*; Li Xiang; Singh Navab; Lee Sungjoo

来源：IEEE Electron Device Letters, 2012, 33(7): 1060-1062.

DOI：10.1109/LED.2012.2195709

• Bipolar switching
• resistive random access memory (RRAM)
• self-compliance

In this letter, HfO2-based RRAM with varying device sizes is discussed with an analysis of the device-size dependence on reset current (I-reset). Device sizes down to 60 nm were achieved by using different thicknesses of nitride spacer after 200-nm contact hole is formed. Platinum (Pt) bottom electrode and titanium nitride (TiN) top electrode were used with HfO2 dielectric as the resistance switching layer. Uniform bipolar switching characteristics with a very low I-reset of about 100 mu A are achieved in 60-nm contact size devices. Self-compliance effect is also observed in the scaled devices.

• 出版日期2012-7