A novel Schottky contact super barrier rectifier with a top N-enhancement layer and a P-injector

作者：Chen, Wensuo^*; Liao, Ruijin; Zeng, Zheng; Zhang, Peijian

来源：Journal of Computational Electronics, 2018, 17(2): 707-712.

DOI：10.1007/s10825-018-1128-6

• Power semiconductor devices
• Super harrier rectifier (SBR)
• Schottky contact
• Conductivity modulation effect
• Surge current capability
• Reverse recovery time

A novel Schottky contact super barrier rectifier (SSBR) with a top N-enhancement layer and a P-injector (P-TNEL-SSBR) is proposed and investigated by simulation. In addition to the concept of SSBR we presented recently, the proposed P-TNEL-SSBR has an extra P-injector structure and a top NEL design (INEL, a modified structure of the N-enhancement layer we proposed earlier). The P-injector structure makes this new rectifier have the conductivity modulation effect by hole injection at large forward current densities which will be helpful for surge current capability. The INEL decreases the barrier capacitance during the reverse recovery state and weakens the JFET effect further in the forward conducting state. Simulation results show that, with almost the same reverse leakage current density and breakdown voltage of approximately 57 V, P-TNEL-SSBR increases the figure of merit (FOM, equates to V-B(2)/R-on,R- sp) by 11.1% at the forward current density of 200 A/cm(2) and decreases the reverse recovery time by 13.3% at the reverse voltage of 12 V compared to those of NEL-SSBR we reported earlier.

• 出版日期2018-6
• 单位重庆大学; 输配电装备及系统安全与新技术国家重点实验室