Extreme low-temperature molecular beam epitaxy of ZnO-based quantum structures

作者：Blumstengel S^*; Sadofev S; Kirmse H; Henneberger F

来源：Applied Physics Letters, 2011, 98(3): 031907.

DOI：10.1063/1.3544575

We report on extreme low-temperature growth of ZnO by plasma-assisted molecular beam epitaxy. Epilayers and quantum well (QW) structures with very good structural and optical properties are prepared at substrate temperatures as low as 50 degrees C. The growth proceeds in a single crystalline layer-by-layer mode. ZnO QWs prepared on a-plane sapphire show bright excitonic luminescence with a very narrow linewidth of only 6 meV at 5 K. High-resolution transmission electron micrographs confirm that low-temperature single crystalline growth is not restricted to a particular surface termination of ZnO but works also for crystal growth along a nonpolar direction.

• 出版日期2011-1-17