A simple approach of preparing amorphous SiOx film on aluminum substrate

作者：Zhang Ji Liang; Li Jian^*

来源：Materials Letters, 2007, 61(29): 5110-5112.

DOI：10.1016/j.matlet.2007.03.105

• thin film
• chemical vapor deposition
• amorphous SiOx
• film
• SiOx/Al structure

A kind of silicon oxide (SiOx) film was grown on aluminum substrate by low temperature-atmospheric pressure chemical vapor deposition (CVD). The film thickness, changed with the procession temperature and time, and source gaseous ratio, were studied. The optimized procession parameters were determined. The film section morphology was investigated by the scanning electronic microscopy (SEM) and result shows that the SiOx film is bound firmly to the aluminum substrate without any crack or gap. The reason of the excellent combination was also discussed. The X-ray diffraction technology (XRD) and transmission electronic diffraction technology (TED) demonstrate that the SiOx film is basically amorphous with a little crystalline area in it.

• 出版日期2007-12
• 单位浙江大学