Atomistic Modeling of Pocket Dopant Deactivation and Its Impact on V-th Variation in Scaled Si Planar Devices Using an Atomistic Kinetic Monte Carlo Approach

作者：Noda Taiji^*; Vrancken Christa; Vandervorst Wilfried

来源：IEEE Transactions on Electron Devices, 2015, 62(6): 1789-1795.

DOI：10.1109/TED.2015.2419876

• Diffusion
• kinetic Monte Carlo (KMC)
• MOSFETs
• semiconductor
• ultrashallow junctions (USJs)
• V-th variation

An analysis of pocket dopant deactivation and its impact on V-th variation for scaled Si devices using an atomistic kinetic Monte Carlo approach are shown in this paper. B 5 keV, 5 x 10(13)/cm(2) + As 1 keV, 1 x 10(15)/cm(2) implants were used for B pocket deactivation study. An effect of laser annealing (LA) before spike-Rapid Thermal Annealing (RTA) was investigated. In case of B pocket implant, a stable B cluster configuration is changed from B3I (>1020 degrees C) to BI2 at spike-RTA temperature similar to 1020 degrees C. BI2 is a source of B pocket deactivation with lower temperature than 1020 degrees C. LA before low-temperature spike-RTA (<1020 degrees C) is useful to improve B pocket activation. The Vth mismatch figure of merit extracted from Pelgrom plot (Avt) degradation in nFET is shown as spike-RTA temperature is reduced. LA before spike-RTA shows a better short channel effect with lower drain-induced barrier lowering in nFET. LA + spike-RTA at 1000 degrees C shows better Avt than spike-RTA-only. The difference of pocket deactivation is one of possible important reasons for the higher Vth mismatch for nFET than for pFET.

• 出版日期2015-6