摘要

Allyl phenyl thiophene ether as novel potential dielectric materials for organic thin film transistors have been synthesized by coupling 2-bromothiophene with 4-bromo allyl phenyl ether and was systematically characterized by elemental analysis and NMR. 4-bromo allyl phenyl ether was synthesized by the reaction between 4-bromophenol and allyl bromide. Self assembled mono-layers of these materials have been covalently grafted onto (111) hydrogenated silicon surfaces through thermal hydrosilation with the alkene end by Si-C bonding mechanism. Monolayer formation was carried out using solutions of the alkene in the high boiling point solvent 1,3,5-triethylbenzene and was characterized by X-ray photoelectron spectroscopy (XPS), contact angle, Atomic Force Microscopy(AFM) and Scanning Tunneling Microscopy (STM).

  • 出版日期2008-6-30
  • 单位南阳理工学院