Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

作者：Amakawa Shuhei^*; Toda Asato; Ohyama Katsuroh; Higashiguchi Naoya; Hori Daisuke; Shintaku Yasuhiro; Miyake Masataka; Miura Mattausch Mitiko

来源：Japanese Journal of Applied Physics, 2011, 50(4): 04DC12.

DOI：10.1143/JJAP.50.04DC12

This paper presents an experimentally found device-size-independent universal relationship between the settling time of floating-body silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) and the substrate current in body-tied devices. Such a relationship could enable one to characterize dynamic properties of SOI MOSFETs through DC measurements and would be useful for physical compact modeling of history effects.

• 出版日期2011-4