A novel MOSFET with vertical signal-transfer capability for 3D-structured CMOS image sensors

作者：Goto Masahide^*; Hagiwara Kei; Iguchi Yoshinori; Ohtake Hiroshi; Saraya Takuya; Toshiyoshi Hiroshi; Hiramoto Toshiro

来源：IEEJ Transactions on Electrical and Electronic Engineering, 2014, 9(3): 329-333.

DOI：10.1002/tee.21974

• fully depleted silicon-on-insulator
• three-dimensional integration
• CMOS image sensor
• More-than-Moore
• MOSFET

We have developed a novel MOSFET that can transfer signals vertically without through-silicon vias but by using a fully depleted silicon-on-insulator (FDSOI) structure with its source region connected to the back electrodes as well as the front ones. A prototype MOSFET fabricated using the backside anisotropic wet etching technique has confirmed that the electrical characteristics measured from the front and the back electrodes are identical. The subthreshold factor S of the prototype was found to be 64.5 mV/decade, suggesting a good switching performance. Since the double-sided MOSFET has vertical signal-transfer capability and excellent operating characteristics, it is expected to contribute to developing a More-than-Moore type device of three-dimensional integration such as pixel-parallel image sensors.

• 出版日期2014-5