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摘要
This work presents a numerical study of the carrier transport properties of In0.18Al0.82N lattice-matched to GaN. Using a full-band Monte-Carlo model, we have evaluated the low- and high-field transport coefficients of this alloy. We have computed the carrier mobilities as a function of temperature for different doping concentrations and areal dislocation densities. Furthermore, we have evaluated the electron and hole drift velocities with and without considering the effect of the alloy scattering. Finally, we have computed the carrier impact ionization coefficients for transport along both the Gamma - A and Gamma - M crystallographic directions.
- 出版日期2013-5-28
