A 0.13 mu m 8 Mb Logic-Based CuxSiyO ReRAM With Self-Adaptive Operation for Yield Enhancement and Power Reduction

作者：Xue Xiaoyong^*; Jian Wenxiang; Yang Jianguo; Xiao Fanjie; Chen Gang; Xu Shuliu; Xie Yufeng; Lin Yinyin; Huang Ryan; Zou Qingtian; Wu Jingang

来源：IEEE Journal of Solid-State Circuits, 2013, 48(5): 1315-1322.

DOI：10.1109/JSSC.2013.2247678

• On-pitch sense amplifier
• ReRAM
• self-adaptive
• read mode (SARM)
• self-adaptive write mode (SAWM)

A 0.13 mu m 8 Mb CuxSiyO resistive random access memory (ReRAM) test macro with 20F(2) cell size is developed based on logic process for embedded applications. Smart and adaptive write and read assist circuits are proposed to fix yield and power consumption issues arising from large variations in set/reset time and high-temperature cell resistance. Self-adaptive write mode (SAWM) helps increase the R-off/R-on window from 8X to 24X at room temperature. The reset bit yield is improved from 61.5% to 100% and the high power consumption is eliminated after the cell switches to R-on during set. Self-adaptive read mode (SARM) increases read bit yield from 98% to 100% at 125 degrees C. The typical access time of the on-pitch voltage sense amplifier (SA) is 21 ns. High bandwidth throughput is supported.

• 出版日期2013-5
• 单位复旦大学