科研之友
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摘要
Cubic boron nitride single crystal was synthesized using the mixture of compound B2O3 or element B and Li3N by chemical reaction under high pressure and high temperature. The lowest conditions of cubic boron nitride formation in two systems 4.0 GPa, 1400 degrees C or 4.5 GPa, 1450 degrees C are obviously lower than that in Li3N-hexagonal boron nitride system. In this study, cubic boron nitride was nucleated directly by bond restructuring, and the mechanism of crystal growth was the application of crystal seed gravitation and dissolve-precipitate effect together. We analyzed the reason that energy of crystal growth required was lower than that of hexagonal boron nitride spontaneous nucleation.
